EPC2105
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- Manufacturer :
- EPC
- Product Category :
- FET, MOSFET Arrays
- Configuration :
- 2 N-Channel (Half Bridge)
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A, 38A
- Drain to Source Voltage (Vdss) :
- 80V
- FET Feature :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 5V, 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 40V, 1100pF @ 40V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Power - Max :
- -
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
- Supplier Device Package :
- Die
- Technology :
- GaNFET (Gallium Nitride)
- Vgs(th) (Max) @ Id :
- 2.5V @ 2.5mA, 2.5V @ 10mA
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Company
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| EPC2 | Automation Components, Inc. | 1 | Analog Input (0-5VDC), Pressure |
| EPC200-CSP5 | ESPROS Photonics AG | 664 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 5,750 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 116,982 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 7,073 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 44,407 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 6,414 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 10,265 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 9,935 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 26,775 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 8,679 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 92,948 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 8,754 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 18,556 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 5,469 | GANFET N-CH 100V 11A DIE |
