R6507ENXC7G
- Manufacturer Part Number:
- R6507ENXC7G
- Manufacturer/Brand:
- ROHM Semiconductor
- Part of Description:
- 650V 7A TO-220FM, LOW-NOISE POWE
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- Stock Condition:
- 998
- Ship From:
- Hong Kong
- Shipment Way:
- DHL/Fedex/TNT/UPS/EMS
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 7A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 390 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation (Max) :
- 46W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 665mOhm @ 2.4A, 10V
- Supplier Device Package :
- TO-220FM
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 200µA
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