FDP3651U

Manufacturer Part Number:
FDP3651U
Manufacturer/Brand:
Fairchild Semiconductor
Part of Description:
POWER FIELD-EFFECT TRANSISTOR, 8
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
Stock Condition:
7,478
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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Manufacturer :
Fairchild Semiconductor
Product Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
5522 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
255W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
18mOhm @ 80A, 10V
Supplier Device Package :
TO-220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
5.5V @ 250µA

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