SIRA01DP-T1-GE3

Производитель :

Vishay / Siliconix

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

26A (Ta), 60A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

112 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3490 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® SO-8

Power Dissipation (Max) :

5W (Ta), 62.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 15A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+16V, -20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA