BUK6C2R1-55C,118

Производитель :

NXP Semiconductors

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

228A (Tc)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

253 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

16000 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab)

Power Dissipation (Max) :

300W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 90A, 10V

Supplier Device Package :

D2PAK-7

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.8V @ 1mA