TP0101K-T1-E3

Производитель :

Vishay / Siliconix

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

580mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

650mOhm @ 580mA, 4.5V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

1V @ 50µA