SIS776DN-T1-GE3

Производитель :

Vishay / Siliconix

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

Schottky Diode (Body)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1360 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-50°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8

Power Dissipation (Max) :

3.8W (Ta), 52W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

6.2mOhm @ 10A, 10V

Supplier Device Package :

PowerPAK® 1212-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA