GA10JT12-247

Производитель :

GeneSiC Semiconductor

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

170W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

140mOhm @ 10A

Supplier Device Package :

TO-247AB

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-