GA100JT17-227

Производитель :

GeneSiC Semiconductor

Категория продукта :

Одиночные полевые транзисторы, МОП-транзисторы

Current - Continuous Drain (Id) @ 25°C :

160A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

14400 pF @ 800 V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation (Max) :

535W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

10mOhm @ 100A

Supplier Device Package :

SOT-227

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-